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Beschrijving

The world of solid state device in semiconductor industries is achieving significant advancement in the recent years and is rapidly changing with the introduction of devices fabricated using semiconductor alloys. III-V compound semiconductor alloys are promising choice for channel material of future post-Si CMOS logic transistors. In the quest to map the potential of III-V compound semiconductor alloys for future CMOS applications, the High Electron Mobility Transistor (HEMT) has emerged as a valuable model system to understand fundamental physical and technological aspects of the device.

Medewerkers

Auteur Baskaran Subramanian

Productdetails

DUIN 3O17HFSFM3H

GTIN 9786200585318

Verschijningsdatum 11.03.2020

Taal Engels

Pagina-aantallen 132

Product type Paperback

Maat 220 x 150  mm

Modeling and Characterization of GaN Based Hemts

Hemts for High Frequency and High Power Applications

Baskaran Subramanian

€ 60,11

Verkoper Dodax EU

Bezorgdatum: tussen dinsdag, 10. november en donderdag, 12. november

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